NTE49 (NPN) & NTE50 (PNP)NTE quick cross says NTE50
NTE49 (NPN) & NTE50 (PNP)
Silicon Complementary Transistors
General Purpose, High Voltage Amp, Driver
Description:
The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, high voltage amplifier and driver applications.
Features:
a.. High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA
b.. High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 100V
Collector-Base Voltage, VCB 140V
Emitter-Base Voltage, VEB 4V
Continuous Collector Current, IC 2A
Collector Power Dissipation (TA = +25°C), PD 1W
Derate Above 25°C 8mW/°C
Collector Power Dissipation (TC = +25°C), PD 10W
Derate Above 25°C 80mW/°C
Operating Junction Temperature Range, TJ -55° to +150°C
Storage Temperature Range, Tstg -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 12.5°C/W
Thermal Resistance, Junction-to-Ambient, RthJA 125°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 100 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 40V, IE = 0 - - 100 nA
ON Characteristics (Note 1)
DC Current Gain hFE VCE = 1V, IC = 50mA 80 125 -
VCE = 1V, IC = 250mA 60 100 -
VCE = 1V, IC = 500mA - 55 -
Collector-Emitter Saturation Voltage VCE(sat) IC = 250mA, IB = 10mA - 0.18 0.4 V
IC = 250mA, IB = 25mA - 0.1 - V
Base-Emitter ON Voltage VBE(on) VCE = 5V, IC = 250mA - 0.74 1.2 V
Small-Signal Characteristics
Current Gain-Bandwidth Product fT IC = 250mA, VCE = 5V, f = 100MHz, Note 1 50 150 - MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 100kHz - 6 12 pF
Note 1. Pulse Test: Pulse Width </= 300µs, Duty Cycle </= 2%.
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Received on Mon Dec 9 23:25:16 2002
This archive was generated by hypermail 2.1.8 : Fri Aug 01 2003 - 00:34:16 EDT